NLD Etch Process Equipment
NLD Etch Process Equipment
NLD-Series Etch System
- 100mm - 200mm Single Wafer Processing
- High density NLD source with low Te using electromagnetic field for plasma confinement
- Anisotropic profile up to 50µm
- High SiO2 etching rate, > 500nm/min
- Low non-uniformity, < + 2% (3o)
- Spatial and temporal control of plasma
- Applications: Ni, Ti, WSix, Al2O3, SiO2, TiO2, WN, LiNO3, GaAs, GaN, InP
The NLD system consists of a process chamber with three electromagnetic coils. The RF antenna is concentrically located with the middle coil. The plasma intensity is confined to the plane of the middle coil and the diameter of the plasma is proportional to the electromagnet current.
This graph illustrates the effect of plasma diameter on etch rate distribution for a SiO2 etch process. The lowest uniformity is achieved by dynamically controlling the plasma diameter during processing.