Sputtering Targets for Cu Wiring

Sputtering Targets for Cu Wiring

ULVAC provides even, high purity Cu and Ta targets without defects through the use of ingots made by zone melt purification and high vacuum technology, and by high precision machining technology.

 

Features

  • The high purity Cu target (purity level: 4N5-7N) is made by   using zone melt technology. A purity level of 5N is realized for the Ta target through melt purification in a high vacuum.
  • Target materials with evenstructures suitable for the LTS (Long Throw Sputtering) are provided through the use of superior machining technology.
  • The low particle sputtering targets available for minute wiring.

 

Applications

  • Barrier metal for copper wiring device (Ta target)
  • Cu target for Cu-seed layer deposition for Cu wiring

 

Element
5N
6N
7N
Na
0.03
<0.01
<0.01
Mg
<0.01
<0.01
<0.01
Al
0.16
0.02
<0.01

Si
0.08
0.02
0.04
P
---
---
<0.01
S
---
---
0.01

K
<0.01
<0.01
<0.01

Ca
<0.01
<0.01
<0.01

Cr
0.06
<0.01
<0.01

Mn
0.11
0.02
---

Fe
0.83
0.04
0.01

Ni
0.87
<0.01
<0.01
Zn
---
---
<0.01

As
0.43
<0.01
<0.01
Ag
---
---
0.01
Cd
---
---
0.02

Sb
0.15
<0.01
<0.01
Te
---
---
<0.05
Pb
<0.01
<0.01
<0.01
Bi
<0.01
<0.01
<0.01
Th
<0.0001
<0.0001
<0.0001
U
<0.0001
<0.0001
<0.0001

 

Examples of Impurities in Ta Targets

 
Fe
Ni
Al
Cr
W
Nb
Ti
Si
Na
K
O
C
4N5
£20
£10
---
---
£10
£10
£5
£30
£1
£1
£150
£20
5N
£1
£2
£1
£1
£10
£5
£1
£30
£0.5
£0.5
£100
£20