High-Density Plasma Etching System NE-550
NE550H is a multipurpose high-density plasma etching system, specifically for R&D test facilities such as universities and government agencies.
Our Products and Technologies
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Equipped with low-pressure, low-electron-temperature and high-density plasma source.
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Supports wide range of process control from ion etching to radical etching.
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Plasma density and uniformity can be controlled by optimizing magnetic field.
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Simple configuration makes maintenance easy.
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Low pressure, High density plasma, Good uniformity - ISM (Inductively Super Magnetron) Plasma Source* ULVAC Patent
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Good repeatability and stability - STAR Electrode* ULVAC Patent
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Precise and stable EPD - Optical Emission EPD (Optional), Laser Interference EPD (Optional)
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Precise wafer temperature control - ESC with He cooling, Mechanical Chuck
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Easy maintenance - Simple maintenance mechanism
Special Features / Further Applications
Films - Electronic Devices (HEMT, HBT, MMIC, etc..)
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III-V materials: Selective etching - GaAs, AlGaAs, InGaAs, InGaP, InP
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Insulating Layers: High speed or damage-free etching - SiO2, SiN, Low-K materials, GaAs VIA, InP VIA, SiC VIA
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Organics: Polyimide, BCB
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Metals and Ceramics: W, WSi, TiW, Mo, PZT, STO, BST, SBT, Ir, IrO2, Au, Pt, Ti, TiN, Ta Optical Devices (Laser Diodes, LED, etc..)
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Non-selective etching - GaAs, AlGaAs, AlGaInP, InAlAs, InP, GaN, AlGaN, InGaN, AlN
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ITO, Sapphire Other Devices (MEMS, Stamper for DVD, etc…)
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Si, SiC, Glass, Quartz, Sapphire, C, Diamond-like Carbon, Al, Cr, Mo
Further Applications
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Ultra-high frequency devices, optical devices (LEDs, LDs).
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Next-generation non-volatile memory.
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Bio-chips and micro-fluid devices.
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Photonic crystals.
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Sensors, MEMS (micro-electromechanical systems).