uGmni -200, 300

Combined deposition and etch modules’ system of cluster type for advanced electronics uGmni-200, 300 Sputtering System, Load-lock type

Our Products and Technologies

uGmni is to equip with a variety of different process modules on the same transfer core which makes reducing spare parts by adopting the same common parts as much as possible as well as improves usability with the same operation panel between these different modules. This improves further efficiency for manufacturing process of advanced electronics.

Special Features / Further Applications

Applications

  • Power device    Seed & Metal layer Sputtering
  • MEMS sensor    PZT Sputtering & Etching
  • Opt. device     VCSEL Etching
  • Packaging     Descum Ashing
  • Communication   Insulated film PE-CVD and Etching

 

Specification

*Not only below, if require others please contact us Below numbers depend on Spec.

  Ultimate
pressure
Stage
temp.
Within wafer unif.
(Ref. only)
Use Plasma source
Sputter <6.7E-5Pa Cold(Cooling ability T.B.D)~700℃ ±1~5% Metal, dielectric film,
insulated film
DC
Pulse DC
RF
Etcher <1.0E-3Pa -20~200℃ <±5% Metal, dielectric film,
insulated film, Si types
CCP
ISM
(Inductively Super Magnetron、ULVAC Patent)
NLD
(Neutral Loop Discharge、ULVAC Patent)
Asher <0.7Pa 50~250℃ ±5% Descum, desmear, removing sacrified layer, surface treatment, removing PR and PI etch Microwave
20~80℃ Microwave+CCP
PE-CVD <2Pa 60~400℃ <±1% Insulated film(SiNx,SiOx) Anode coupling
Dual Frequency

 

System configurations

Varieties of modules can be equipped

gemini_core_e.png

Any questions?
Contact us