ULVAC offers technical solutions for the production of Si power devices. ULVAC is the industry leader in the delivery of Si power devices, including IGBTs.
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Medium Current Ion Implanter SOPHI-400
- Proton implantation
- 4 -8 inch wafers
- Applicable for ultra thin wafers
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Activation Annealing System Ailesic-2000
- Operational temp. is 1200 - 1900°C (max. 2000°C)
- High temperature unifomity
- Cooling time is 115min from 1900 to 300°C
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Oxidation-Nitridization-Annealing System Ailesic 1400-1700
- High temperature uniformity
- Footprint 1.1m x 3.9m
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High-temp Ion Implanter for SiC IH-860PSIC
- 100m/150mm wafer
- Hot plate and cooling ESC equipped
- SiC devices
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Medium Current Ion Implanter SOPHI-200/260
- 4 - 8 inch wafers
- Ultra thin wafers
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Dry Etching System for Production NE-5700 & NE-7800
- High volume production
- Wide selection of tool configuration
- Stable etching rate
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Load-lock-type Plasma CVD System CC-200/400
- Plasma process on 27.12MHz
- Chamber cleaning by CF4 and O2 plasma
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Back Side Metallization Sputtering System SRH-530
- ESC method available
- sizes 125 to 200mm
- up to 5 process recipes