Dry Etching System for Production NE-5700 & NE-7800
Dry etching system for high volume production with good cost performance and wide selection of tool configuration.
Our Products and Technologies
- GaN Recess with selectivity to AlGaN >350
- precise etch stop using laser interferometry EPD
- low damage SiN etching
- SiC via etching with ER≥1μm/min (Ni mask)
- Au, Pt, Ti etching without sidewall deposition
- stable etching rate using STAR electrode with Bias power (no re-deposition)
- 200mm cluster tool with up to two process chambers
Special Features / Further Applications
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Compound semiconductor (LED, LD and RF devices), Power devices (IGBT, SiC)
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Metal, Dielectric, Polymer, Gate electrode etching
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Ferro electric material, Noble metal etching
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Ferro magnetic material etching