High-temp Ion Implanter for SiC IH-860PSIC
The Ion Implanter IH-860DSIC is a system especially designed for mass production with high temp ESC for SiC.
Our Products and Technologies
- Parallel beam high temperature ion implanter for SiC devices
- 100mm/150mm wafer available
- up to 500C with hot plate type ESC and pre-heat stage
- Both hot plate ESC and cooling EXC are equipped
- rapid heating and good temperature uniformity
- 400keV single / 800keV double / 1.2MeV for triple Charge
- Footprint 7.6m x 3.6m
Special Features / Further Applications
-
SiC devices