Activation Annealing System Ailesic-2000

SiC power device recently became a key technology to realize a 'low-carbon society'. The Oxidation/Nitridization/Annealing system Ailesic 2000 from our partner Toyoko Kagaku is our solution to assure you improved performance of the SiC thermal processes and a stable mass production in the Activation Anneal Process.


  • automatic C2C high throughput vertical furnace for up to 150mm substrates

  • operational temp. is 1200…1900°C (max. 2000°C)

  • heating rate ≤100°C, cooling time is 115min from 1900°C to 300°C

  • batch size is 25 wafers

  • high purity carbon boat

  • long life metal heater (>10 years)

  • high temperature uniformity of ±5K
  • footprint 1.25m x 4.35m

Special Features / Further Applications

  • Activation Anneal process ( Post Implantation Anneal )

Any questions?
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