Activation Annealing System Ailesic-2000
SiC power device recently became a key technology to realize a 'low-carbon society'. The Oxidation/Nitridization/Annealing system Ailesic 2000 from our partner Toyoko Kagaku is our solution to assure you improved performance of the SiC thermal processes and a stable mass production in the Activation Anneal Process.
Features
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automatic C2C high throughput vertical furnace for up to 150mm substrates
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operational temp. is 1200…1900°C (max. 2000°C)
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heating rate ≤100°C, cooling time is 115min from 1900°C to 300°C
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batch size is 25 wafers
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high purity carbon boat
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long life metal heater (>10 years)
- high temperature uniformity of ±5K
- footprint 1.25m x 4.35m
Special Features / Further Applications
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Activation Anneal process ( Post Implantation Anneal )