High-temp Ion Implanter for SiC IH-860PSIC

The Ion Implanter IH-860DSIC is a system especially designed for mass production with high temp ESC for SiC.



  • Parallel beam high temperature ion implanter for SiC devices
  • 100mm/150mm wafer available
  • up to 500C with hot plate type ESC and pre-heat stage
  • Both hot plate ESC and cooling EXC are equipped
  • rapid heating and good temperature uniformity
  • 400keV single / 800keV double / 1.2MeV for triple Charge
  • Footprint 7.6m x 3.6m

Special Features / Further Applications


  • SiC devices


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