Cluster-type PE-CVD System CME-Series
CME-200E/400 is the most suitable model in the PE-CVD series production system for deposition of Si films with application as Insulator or barrier layers.
Features
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High-density plasma process with high-frequency (27.12 MHz) power supply
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High-quality film using SiH4 precursor: SiO2, SiNx, SiON, a-Si, also for TEOS process for SiO2 film
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Chamber Cleaning with NF3+Ar plasma
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Substrate size up to 200 x 200mm for CME-200E, max. 300 x 400mm for CME-400
Special Features / Further Applications
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Supports the heater for low-temperature deposition of organic EL.
Further Applications
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Power device
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LED, LD, High-speed device
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Solar cell
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MEMS