Cluster-type PE-CVD System CME-Series

CME-200E/400 is the most suitable model in the PE-CVD series production system for deposition of Si films with application as Insulator or barrier layers.

Features

 

  • High-density plasma process with high-frequency (27.12 MHz) power supply

  • High-quality film using SiH4 precursor: SiO2, SiNx, SiON, a-Si, also for TEOS process for SiO2 film

  • Chamber Cleaning with NF3+Ar plasma

  • Substrate size up to 200 x 200mm for CME-200E, max. 300 x 400mm for CME-400

 

Special Features / Further Applications

 

  • Supports the heater for low-temperature deposition of organic EL.

 

Further Applications

  • Power device

  • LED, LD, High-speed device

  • Solar cell

  • MEMS

 

Any questions?
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