Sputtering Targets for Semiconductor Applications


  • Sputtering targets made using optimum manufacturing methods!
    ULVAC has developed 2 types of tungsten targets for different manufacturing methods depending on the particular application required by the semiconductor process. One type was developed for products at a purity grade of 5N is an inexpensive and employs the powder sintering method. High-purity CVD tungsten target boasting a purity grade of 7N and using CVD (chemical vapor deposition) on sections requiring higher quality.
  • Low-particle targets
    ULVAC has developed sputtering targets that suppress generation of particles that can be the source of problems in the sputtering process.
    Gaseous elements are one factor in causing particle emissions especially in aluminum targets and we are working to lower emissions by utilizing a vacuum melting method in the refining and ingot purification processes.
  • Attaining high uniformity by adjusting the metal microstructure
    ULVAC uses manufacturing processes that ensure high uniformity and a fine metal microstructure in most of its targets for semiconductor products including high purity cobalt targets and titanium targets.
    Utilizing a fine metal microstructure having a high degree of uniformity for example allows uniform the magnetic flux leakage on the target surface of high purity cobalt targets.
  • Meticulous quality control system
    Integrated process manufacturing at ULVAC takes product characteristics and contours into account during production. Sophisticated analysis/evaluation system such as the GD-MS (glow discharge mass spectrometer) ensure purity along with a high level of quality.

GDMS Analysis/Comparison for Various Tungsten Targets

Target Sinter-W CVD-W
Na ≤ 0.1 ≤ 0.01
K ≤ 0.1 ≤ 0.01
Mg - ≤ 0.01
Ca - ≤ 0.01
Al ≤ 1 ≤ 0.03
Cr ≤ 1 ≤ 0.03
Fe ≤ 1 ≤ 0.03
Ni ≤ 1 ≤ 0.03
Cu ≤ 1 ≤ 0.01
Th ≤ 0.0005 ≤ 0.0002
U ≤ 0.0005 ≤ 0.0002
O ≤ 100 ≤ 30
C ≤ 50 ≤ 30


Sputtering Targets for Semiconductors

Application Field  Materials  Manufacturing Method  Purpose of Use 
Electrode materials  W (5N) Powder sintering  Gate area
W (6N, 7N)  CVD  Gate etc.
Co(5N)  Melting method  Gate area
Ni(5N)  Melting method  Gate area
Ti(5N)  Melting method  Lynear, Barrier etc.
Various silicide(4N up)  Powder sintering   
Wiring Materials  Al(5N, 5N5) & Al alloy such as AlCu(5N, 5N5)  Vacuum melting method  Inter conect
Cu(6N)  Melting method  Inter conect
Compound semiconductor materials Au, Au alloy(4N)  Melting method  Wiring 
WSi(5N)  Powder sintering  Electrode 
SiO2(4N,6N)  Artificial/ natural quartz  Insulating material 
Mounting & wiring  Al(5N, 5N5)& Al alloy(5N, 5N5) Vacuum melting method  Wiring 
Cu(4N)  Melting method  Wiring 
Cr(3N)  Powder sintering  Barriers 
Precious metal materials  Melting method  Wiring 
TiW(4N up)  Powder sintering  Barriers 
Ni(4N)  Melting method  Barriers 
Capacitor materials  BST Powder sintering  DRAM/thin film capacitors 
PZT  Powder sintering  FeRAM 
Barrier materials  Ti(4N5)  Melting method   
TiW(4N up)  Powder sintering   

Target Material for Mainstream 300mm Wafers

Target Material Al-0.5mass%Cu Ti Cu Ta W
Purity 5N5up (low-U, Th specifications) 4N5up 6Nup 6Nup (except for Nb and W) 5N, 6N, 7N
Backing plate Material Aluminum or Copper Alloy Aluminum Alloy Aluminum Alloy Aluminum or Copper Alloy Aluminum alloy
Copper Alloy
Bonding Method Electron Beam Welding, Integrated
Part Structure, or Metal Bonding
Diffusion Bonding Diffusion Bonding Diffusion Bonding Metal Bonding


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